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| AP9435GG Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Fast Switching Characteristic Single Drive Requirement RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50m - 4.2A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D S SOT-89 D G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating - 30 20 - 4.2 -3.4 -20 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 100 Unit /W Data and specifications subject to change without notice 201021051-1/4 AP9435GG Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.1 6 10 2 6 10 7 26 14 520 180 130 16 Max. Units 50 90 -3 -1 -25 100 16 830 24 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance 2 VDS=VGS, ID=-250uA VDS=-10V, ID=-4A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-4A VDS=-25V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz o Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-1A, VGS=0V IS=-4A, VGS=0V, dI/dt=-100A/s Min. - Typ. 30 24 Max. Units -1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Surface mount on FR4 board, t < 10s. 2/4 AP9435GG 20 20 T A =25 C 15 o -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) T A =150 C 15 o -10V -7.0V -5.0V -4.5V 10 10 5 5 V G =-3.0V V G =-3.0V 0 0 2 4 6 0 0 2 4 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 1.8 I D =-2A T A =25 Normalized RDS(ON) 120 I D = -4 A V G =-10V 1.4 RDS(ON) (m ) 80 1.0 40 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 4 Normalized -VGS(th) (V) 3 1.5 -IS(A) o T j =150 C 2 T j =25 o C 1.0 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9435GG f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 9 I D =- 4 A V DS =-2 5 V C (pF) C iss 6 3 C oss C rss 0 0 5 10 15 20 25 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us -ID(A) 1 0.2 1ms 10ms 0.1 0.1 0.05 PDM t T 0.02 0.1 o T A =25 C Single Pulse 100ms 1s 10s 10 100 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + Ta Rthja=100 oC/W 0.01 0.1 1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =-5V -ID , Drain Current (A) 15 VG QG T j =25 o C T j =150 o C -4.5V QGS QGD 10 5 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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